Passivated planar ion-implanted silicon (PIPS) detectors are the product of modern semiconductor technology, using planar technology, using photolithography to determine the geometry of the detector. With precise control of oxide passivation, ion implantation is used to control the formation of precise connections, which is very necessary for low reverse leakage current and thinner entrance window. PIPS detectors have the following advantages over older technologies:

1. All structural edges are embedded inside, no need to use epoxy edge sealant;

2. The entrance window is durable and easy to clean and wipe;

3. In order to obtain better energy resolution, the connection contacts are precisely formed by ion implantation and are thinner;

4. The leakage current of noise is usually 0.1 to 0.001 of that of SSB and DJ type detectors;

5. The thickness of the entrance window is smaller;

6. The standard detector can be heated to 120°C;

7. The required size can be customized.

The types of PIPS detectors that we can provide are divided into two categories: sustainable air monitoring planar (CAM) series PIPS detectors and full depletion (RD) series PIPS detectors. CAM series PIPS detectors are suitable for continuous air type α and β particle detection, off-line measurement filter sample measurement, mainly used in radon meter and daughter aerosol detection; RD series PIPS detectors are mainly used for α and β particle energy spectrum Measurements are standard detectors for charged particle spectrometers.

The passivated implanted planar silicon detector (PIPS detector) produced by us is designed using planar technology. The geometric shape is precisely determined through photolithography technology,and the ion implantation process forms the connecting contact.It has smaller reverse leakage current and a thinner dead layer thickness of the entrance window. It is mainly used for measuring alpha particles and beta rays,and is widely used in nuclear science and technology, radiation protection and monitoring, environmental radiation detection. Compared with the Silicon Surface Barrier detector (SSB), the edge of its structure is embedded inside the detector instead of being sealed with epoxy resin, which reduces the leakage current. lon implantation technology can obtain a thinner thickness of the dead layer, which is beneficial to improve detection resolution while maintaining a sturdy and reliable contact electrode.

The continuous air monitoring (CAM)system is used for long-term and continuous monitoring of radioactive particles in the air inside and around nuclear facilities. CAM type PIPS detectors are used for alpha and beta counting or energy spectrum analysis on the filters in the system, so the detectors are required to operate under uncontrolled atmospheric conditions and external lighting conditions. The CAM PIPS detector produced by us has aluminum and protective coatings on the front surface. The  aluminum coating allows the detector to be operated in ambient light and the protective coating provides mechanical protection for the aluminum layer. The total entrance window thickness is less than 2um equivalent silicon. The active area of the detector ranges from 300-620mm2, and the bias voltage can be set from +15V to +30V without a separate high voltage power supply module. For alphas,the detectors can operate with bias voltage as low as 15 V. With 70 V bias, full depletion is achieved which ensures uniform response.

The thickness of the detector is 300μm and 500μm; in terms of interface, the detector can choose Microdot, BNC and SMA interface; in addition, ceramic shell, PCB board, metal shell packaging can be provided; product specifications mainly provide the following size models, according to User requests custom size.