Introduction:
GOS doped with rare earth ion has relatively high light output and extremely low afterglow, the emission peaks range from 470-900 nm with spectral sensitivity ofsilicon photodiodes, and it has been
widely used for CT scanners, security instruments and non destructive testing.
Key Features: Applications:
Emission wavelength at 510 nm Container scanning systems
Compatible with photodiode readout Safety inspection imaging&NDT
Medical CT imaging
Properties:
Density(g/cm3) | 7.34 |
Hardness(Mohs | 4.5 |
Decay time(ns) | 3000 |
Afterglow | <0.1%@3ms |
Wavelength of emission max(nm) | 510 |
Light Yield (Photons/MeV) | 25000~30000 |
Cleavage | None |
Hygroscopic | None |